Semiconductor Materials » Exercise - 121. Doping is a process of : (a) Purifying semiconductor material (b) Increasing impurity percentage (c) Removal of foreign atoms (d) Increasing the bias potential
Semiconductor Materials » Exercise - 3123. In germanium, medium doping corresponds to impurity of the order : (a) 1 part in 105 (b) 1 part in 104 (c) 1 part in 103 (d) 1 part in 102
Semiconductor Materials » Exercise - 124. When a semiconductor is heavily doped in a range of 1017 to 1018 impurity atoms/cm3, then it behaves as : (a) Intrinsic semiconductor (b) Extrinsic semiconductor (c) Simply as semiconductor (d) Degenerative semiconductor
Semiconductor Materials » Exercise - 3125. Through repeated zone refining, the residual impurity in a semiconductor is of the order : (a) 1 part in 104 (b) 1 part in 107 (c) 1 part in 109 (d) 1 part in 1011
Semiconductor Materials » Exercise - 141. The forbidden energy gap Eg in a semiconductor is a function of : (a) Current (b) Voltage (c) Potential (d) Temperature