21. Localized hot spots and device destruction can take place in power transistors due to :
(a) Avalanche breakdown
(b) Primary breakdown
(c) Second breakdown
(d) Quasi-saturation breakdown
22. The current amplification factor of α of a transistor is always :
(a) Less than 1
(b) Greater than 1
(c) Equal to 1
(d) None of these
23. As compared to PNP transistor, NPN transistors are preferred due to :
(a) Economical
(b) Simple operating mechanism
(c) Consumes less bias voltage
(d) Better high frequency response
24. Two elements that are frequently used for making transistors are :
(a) Iridium and Tungsten
(b) Lead and Tin
(c) Iron and Carbon
(d) Silicon and Germanium
25. The current in a PMOS transistor is :
(a) Less than thrice that in an NMOS device
(b) Greater than thrice that in a PMOS device
(c) Less than half of that in an NMOS device
(d) Greater than half of that in a WMOS device
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