41. The forbidden energy gap Eg in a semiconductor is a function of :
(a) Current
(b) Voltage
(c) Potential
(d) Temperature
42. Intrinsic concentration of charge carriers in a semiconductor varies as :
(a) T
(b) T2
(c) T3
(d) 1/T
43. On increasing the impurity concentration in the metal, the residual part of the resistivity :
(a) Decreases
(b) Increases
(c) Remains constant
(d) May increase or decrease
44. At room temperature in intrinsic germanium, there is about :
(a) One free electron for every 109atoms
(b) One free electron for every 1010 atoms
(c) One free electron for every 1012 atoms
(d) One free electron for every 1015 atoms
45. A compensated semiconductor is doped with :
(a) Only donor impurities
(b) Only acceptor impurities
(c) Both donor and acceptor impurities
(d) Neither donor nor acceptor impurity
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