PN Junction Diode » Exercise – 1
21. Which one is the valid statement with respect to PN junction diode ?
(a) Under forward bias, the electrons from P region & holes from N region drift towards the junction
(b) A junction diode cannot be used as a switch in electrical circuits
(c) Depletion capacitance is voltage independent
(d) Diffusion current of minority carriers is proportional to the concentration gradient
Subject Name : Electronics Engineering Exam Name : IIT GATE, UPSC ESE, RRB, SSC, DMRC, NMRC, BSNL, DRDO, ISRO, BARC, NIELIT
Posts Name : Assistant Engineer, Management Trainee, Junior Engineer, Technical Assistant
Electronics & Communication Engineering Books
GATE 2023 Total Info ENGG DIPLOMA UGC NET Total Info IES 2023 Total Info PSUs 2022 Total Info CSIR UGC NET Total Info JAM 2023 Total Info M TECH 2023 Total Info RAILWAY 2022 Total Info
Related Posts
PN Junction Diode » Exercise - 138. The forward voltage drop across a silicon diode is about ............. (a) 2.5 V (b) 3 V (c) 10 V (d) 0.7 V- PN Junction Diode » Exercise - 123. What is the type of capacitance effect exhibited by the PN junction when it is forward biased ? (a) Diffusion capacitance (b) Storage capacitance (c) Drift capacitance (d) Transition capacitance
- PN Junction Diode » Exercise - 137. The reverse current in a diode is of the order of ............ (a) kA (b) mA (c) microA (d) A
- PN Junction Diode » Exercise - 131. The dynamic resistance r of a diode varies as : (a) 1/I (b) 1/I2 (c) I (d) I2
- PN Junction Diode » Exercise - 129. An ideal diode can be considered as an : (a) Amplifier (b) Bi-stable switch (c) Oscillator (d) Fuse