Semiconductor Physics – Exercise – 1

31. The reverse saturation current Is will just ________ in magnitude for every 10° C increase in temperature.

(a) double
(b) remain the same
(c) halve
(d) triple

Answer
Answer : (a)
Explanation
Explanation : No answer description available for this question. Let us discuss.
Discuss
Discuss : Write your answer. Click here.

32. In n-type material the ________ is called the majority carrier.

(a) electron
(b) hole
(c) proton
(d) neutron

Answer
Answer : (a)
Explanation
Explanation : No answer description available for this question. Let us discuss.
Discuss
Discuss : Write your answer. Click here.

33. The intensity of LED is greatest at ________ degrees and the least at ________ degrees.

(a) 0, 90
(b) 45, 90
(c) 0, 45
(d) 90, 180

Answer
Answer : (a)
Explanation
Explanation : No answer description available for this question. Let us discuss.
Discuss
Discuss : Write your answer. Click here.

34. What is the value of the transition capacitance for a silicon diode when VD = 0? (Choose the best answer.)

(a) 1 pF
(b) 3 pF
(c) 5 pF
(d) 10 pF

Answer
Answer : (b)
Explanation
Explanation : No answer description available for this question. Let us discuss.
Discuss
Discuss : Write your answer. Click here.

35. Which of the following devices can check the condition of a semiconductor diode?

(a) Digital display meter (DDM)
(b) Multimeter
(c) Curve tracer
(d) All of the above

Answer
Answer : (d)
Explanation
Explanation : No answer description available for this question. Let us discuss.
Discuss
Discuss : Write your answer. Click here.

Related Posts

  • Semiconductor Physics - 56555555555556. In what state is a silicon diode if the voltage drop across it is about 0.7 V? (a) No bias (b) Forward bias (c) Reverse bias (d) Zener region
    Tags: bias, semiconductor, silicon, diode, voltage, forward, reverse, region, electronics, engineering
  • Semiconductor Physics - 355555555553. Ionization within a P-N junction causes a layer on each side of the barrier called the: (a) junction (b) depletion region (c) barrier voltage (d) forward voltage
    Tags: junction, barrier, voltage, semiconductor, p-n, called, depletion, region, forward, electronics
  • PN Junction Diode - 21PN Junction Diode » Exercise - 121. Which one is the valid statement with respect to PN junction diode ? (a) Under forward bias, the electrons from P region & holes from N region drift towards the junction (b) A junction diode cannot be used as a switch in electrical circuits (c) Depletion capacitance is voltage independent (d) Diffusion current of minority carriers is proportional to the concentration gradient
    Tags: junction, diode, region, depletion, carriers, voltage, holes, electrons, bias, forward
  • Semiconductor Physics - 23555555555523. A P-N junction mimics a closed switch when it: (a) has a low junction resistance (b) is reverse biased (c) cannot overcome its barrier voltage (d) has a wide depletion region
    Tags: junction, semiconductor, region, depletion, voltage, barrier, reverse, resistance, p-n, electronics
  • Semiconductor Physics - 855555555558. When is a P-N junction formed? (a) in a depletion region (b) in a large reverse biased region (c) the point at which two opposite doped materials come together (d) whenever there is a forward voltage drop
    Tags: region, semiconductor, voltage, forward, reverse, depletion, junction, p-n, electronics, engineering

LEAVE A REPLY

Please enter your comment!
Please enter your name here