81. Temperature coefficient of resistance of a pure semiconductor specimen is :
(a) Zero
(b) Positive
(c) Negative
(d) None of the above
82. Forbidden energy gap between the valence band and conduction band is least in the case of :
(a) Impure silicon
(b) Pure silicon
(c) Pure germanium
(d) Mica
83. In germanium an electron in the conduction band :
(a) Has same energy as an electron in valence band
(b) Has less energy as compared to an electron in valence band
(c) Has greater energy as compared to an electron in valence band
(d) Has zero charge
84. In N-type germanium with boron impurity, the ionization energy is about :
(a) 0.002 eV
(b) 0.010 eV
(c) 0.100 eV
(d) 1.000 eV
85. Which is the initial process to be followed in preparing devices from a semiconductor block ?
(a) Crystal formation
(b) Crystal pulling
(c) Purification
(d) Wafering
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