Semiconductor Materials » Exercise – 1
16. While plotting the V-I characteristics of semiconductor diode, the voltage is plotted along horizontal axis and the current along the vertical axis because :
(a) The voltage and currents are independent variables
(b) The voltage and currents are dependent variable
(c) The voltage is dependent and the current is independent variable
(d) The voltage and the current are dependent variables
Subject Name : Electronics Engineering Exam Name : IIT GATE, UPSC ESE, RRB, SSC, DMRC, NMRC, BSNL, DRDO, ISRO, BARC, NIELIT
Posts Name : Assistant Engineer, Management Trainee, Junior Engineer, Technical Assistant
Electronics & Communication Engineering Books
GATE 2023 Total Info ENGG DIPLOMA UGC NET Total Info IES 2023 Total Info PSUs 2022 Total Info CSIR UGC NET Total Info JAM 2023 Total Info M TECH 2023 Total Info RAILWAY 2022 Total Info
Related Posts
Special Diodes » Exercise - 1 1. A Zener diode : (a) Is a battery under forward biased condition (b) Acts like battery when it breakdowns (c) Is a switch (d) Is a device having barrier potential more than 5V 2. At 25ºC, a Zener diode rates at 2 watts, its power rating at 50ºC will be : (a) Zero watts (b) Less than 1 watt (c) Greater than 2 watts (d) Less than 2 watts 3. Silicon is appreciably employed as a base material compared to germanium while manufacturing Zener diode since : (a) silicon is abundantly available (b) it is costlier (c) it has low current capability (d) it has high temperature capability 4. The capacitance of a varactor diode increases, when the reverse voltage across it is : (a) Decreased (b) Increased (c) Kept constant (d) None of the above 5. The main advantage of a point contact diode is that : (a) The ratio of forward current to reverse current is very high (b) Low input impedance (c) Its cut-in voltage is equal to zero (d) Its reverse resistance is infinite 6. Which one of the following is a Square law device ? (a) Zener diode (b) Crystal diode (c) Tunnel diode (d) Varactor diode 7. Match the given lists. List I…- Semiconductor Materials » Exercise - 3137. The barrier voltage at a pn junction for germanium is about ........ (a) 3.5 V (b) 3 V (c) zero (d) 0.3 V
- Semiconductor Materials » Exercise - 141. The forbidden energy gap Eg in a semiconductor is a function of : (a) Current (b) Voltage (c) Potential (d) Temperature
- Semiconductor Materials » Exercise - 3145. The leakage current in a pn junction is of the order of ........ (a) A (b) mA (c) kA (d) microA
- 5555555555106. A silicon diode is forward-biased. You measure the voltage to ground from the anode at ________, and the voltage from the cathode to ground at ________. (a) 0 V, 0.3 V (b) 2.3 V, 1.6 V (c) 1.6 V, 2.3 V (d) 0.3 V, 0 V