Memory Devices – Exercise – 1

6. BURST refresh in DRAM is also called as :

(a)  Concentrated Refresh
(b)  Distributed Refresh
(c)  Hidden Refresh
(d)  None

Answer
Answer : (a)
Explanation
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7. For the most static RAM, the maximum access time is about :

(a)  1 ns
(b)  10 ns
(c)  100 ns
(d)  1 µs

Answer
Answer : (c)
Explanation
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8. For the most static RAM, the write pulse width should be at least :

(a) 10 ns
(b) 60 ns
(c) 300 ns
(d) 1 µs

Answer
Answer : (b)
Explanation
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9. Access time is faster for :

(a)  ROM
(b)  SRAM
(c)  DRAM
(d)  EPROM

Answer
Answer : (b)
Explanation
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10. ROM stands for :

(a)  Reading/writing
(b)  Writing
(c)  Reading
(d)  All the above

Answer
Answer : (c)
Explanation
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