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Transistors – 1 – 5

21. Localized hot spots and device destruction can take place in power transistors due to :

(a) Avalanche breakdown
(b) Primary breakdown
(c) Second breakdown
(d) Quasi-saturation breakdown

ANSWER

EXPLANATION

22. The current amplification factor of α of a transistor is always :

(a) Less than 1
(b) Greater than 1
(c) Equal to 1
(d) None of these

ANSWER

EXPLANATION

23. As compared to PNP transistor, NPN transistors are preferred due to :

(a) Economical
(b) Simple operating mechanism
(c) Consumes less bias voltage
(d) Better high frequency response

ANSWER

EXPLANATION

24. Two elements that are frequently used for making transistors are :

(a) Iridium and Tungsten
(b) Lead and Tin
(c) Iron and Carbon
(d) Silicon and Germanium

ANSWER

EXPLANATION

25. The current in a PMOS transistor is :

(a) Less than thrice that in an NMOS device
(b) Greater than thrice that in a PMOS device
(c) Less than half of that in an NMOS device
(d) Greater than half of that in a WMOS device

ANSWER

EXPLANATION

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