76. In semiconductor, the rate of diffusion of charge carriers depends on :
(a) Concentration gradient
(b) Mobility
(c) Both (a) and (b)
(d) Either (a) and (b)
77. In P-type semiconductor :
(a) n=p
(b) p
(c) n
(d) p>>n
78. At 300ºK, the forbidden energy gap in silicon is :
(a) 0.78 eV
(b) 1.21 eV
(c) 0.72 eV
(d) 1.10 eV
79. An intrinsic semiconductor at absolute zero temperature :
(a) Acts as a good conductor
(b) Acts as a good insulator
(c) Has only few holes and electrons
(d) Has only few holes but no electrons
80. Energy required to break a covalent bond in a semiconductor is :
(a) Equal to 1.6 eV
(b) Greater in Ge than in Si
(c) Equal to the width of the forbidden energy gap
(d) None of the above
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