Semiconductor Materials – Exercise – 1

21. Doping is a process of :

(a) Purifying semiconductor material
(b) Increasing impurity percentage
(c) Removal of foreign atoms
(d) Increasing the bias potential

Answer
Answer : (b)
Explanation
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22. For a doped semiconductor material, the dynamic resistance is :

(a) Small and can be neglected
(b) Large and can be neglected
(c) Small but cannot be neglected
(d) Large but cannot be neglected

Answer
Answer : (a)
Explanation
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23. ……….. is an example of acceptor material.

(a) Gallium
(b) Arsenide
(c) Bismuth
(d) Antimony

Answer
Answer : (a)
Explanation
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24. When a semiconductor is heavily doped in a range of 1017 to 1018 impurity atoms/cm3, then it behaves as :

(a) Intrinsic semiconductor
(b) Extrinsic semiconductor
(c) Simply as semiconductor
(d) Degenerative semiconductor

Answer
Answer : (d)
Explanation
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25. Graphite is a :

(a) Conductor
(b) Insulator
(c) Semiconductor
(d) None of these

Answer
Answer : (c)
Explanation
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