Tuesday , March 20 2018

Semiconductor Materials – 84

84. In N-type germanium with boron impurity, the ionization energy is about :

(a) 0.002 eV
(b) 0.010 eV
(c) 0.100 eV
(d) 1.000 eV

Answer : (b)

Explanation : No answer description available for this question. Let us discuss.

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