Semiconductor Materials – 3 – 5

121. In p-type semiconductor :

(a) Holes form the majority carrier
(b) Free electrons form the minority carrier
(c) Hole density is equal to electron density
(d) It is formed by adding pentavalent impurity

ANSWER

EXPLANATION

122. In an intrinsic semiconductor, Fermi level represents the energy level with probability of its occupation of :

(a) 0 per cent
(b) 25 per cent
(c) 50 per cent
(d) 75 per cent

ANSWER

EXPLANATION

123. In germanium, medium doping corresponds to impurity of the order :

(a) 1 part in 105
(b) 1 part in 104
(c) 1 part in 103
(d) 1 part in 10
2

ANSWER

EXPLANATION

124. Forbidden energy gap between the valence and conduction bands is least in the case of :

(a) Pure Si
(b) Pure Ge
(c) Mica
(d) Impure Si

ANSWER

EXPLANATION

125. Through repeated zone refining, the residual impurity in a semiconductor is of the order :

(a) 1 part in 104
(b) 1 part in 107
(c) 1 part in 109
(d) 1 part in 1011

ANSWER

EXPLANATION

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