Semiconductor Materials – 2 – 7

81. Temperature coefficient of resistance of a pure semiconductor specimen is :

(a) Zero
(b) Positive
(c) Negative
(d) None of the above

ANSWER
Answer : (c)

EXPLANATION
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82. Forbidden energy gap between the valence band and conduction band is least in the case of :

(a) Impure silicon
(b) Pure silicon
(c) Pure germanium
(d) Mica

ANSWER
Answer : (a)

EXPLANATION
No answer description available for this question. Let us discuss.

83. In germanium an electron in the conduction band :

(a) Has same energy as an electron in valence band
(b) Has less energy as compared to an electron in valence band
(c) Has greater energy as compared to an electron in valence band
(d) Has zero charge

ANSWER
Answer : (c)

EXPLANATION
No answer description available for this question. Let us discuss.

84. In N-type germanium with boron impurity, the ionization energy is about :

(a) 0.002 eV
(b) 0.010 eV
(c) 0.100 eV
(d) 1.000 eV

ANSWER
Answer : (b)

EXPLANATION
No answer description available for this question. Let us discuss.

85. Which is the initial process to be followed in preparing devices from a semiconductor block ?

(a) Crystal formation
(b) Crystal pulling
(c) Purification
(d) Wafering

ANSWER
Answer : (c)

EXPLANATION
No answer description available for this question. Let us discuss.

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