Semiconductor Materials – Exercise – 2

Semiconductor Materials » Exercise – 2

51. The drift velocity of an electron depends on :

(a) Electron and holes mobility
(b) Electron mobility
(c) Electron mobility and applied electric field
(d) Applied electric field

Answer
Answer : (c)
Explanation
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52. To find whether the semiconductor is N-type or P-type, one of the following effects can be used :

(a) Seebeck effect
(b) Peltier effect
(c) Hall effect
(d) Avalanche effect

Answer
Answer : (c)
Explanation
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53. Practically the hole mobility is …………… to the electron mobility in intrinsic semiconductor.

(a) Equal
(b) Half
(c) Twice
(d) Thrice

Answer
Answer : (b)
Explanation
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54. In an N-type material, the free electrons concentration is approximately equal to :

(a) The density of acceptor atoms
(b) The density of the donor atoms
(c) Sum of the density of acceptor and donor atoms
(d) None of these

Answer
Answer : (b)
Explanation
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55. A semiconductor is those material which has :

(a) Almost filled valence and conduction bands
(b) Almost empty valence and conduction bands
(c) Almost filled valence and almost empty conduction bands
(d) Almost empty valence and almost filled conduction bands

Answer
Answer : (c)
Explanation
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