Power Semiconductor Devices » Exercise - 1 23. Between the peak point and the valley point of UJT emitter characteristics we have ............ region. (a) saturation (b) negative resistance (c) cut-off (d) none of the above
Power Semiconductor Devices » Exercise - 1 25. The device that exhibits negative resistance region is ........................ (a) diac (b) triac (c) transistor (d) UJT
Power Semiconductor Devices » Exercise - 1 11. A UJT has ........................ (a) two pnjunctions (b) one pnjunction (c) three pnjunctions (d) none of the above
Power Semiconductor Devices » Exercise - 1 29. Which of the following is not a characteristic of UJT ? (a) intrinsic stand off ratio (b) negative resistance (c) peak-point voltage (d) bilateral conduction