Home / Power Semiconductor Devices – 1 – 5

Power Semiconductor Devices – 1 – 5

21. The intrinsic stand off ratio (η) of a UJT is given by ……………..

(a) RB1+RB2
(b) (RB1+RB2)/RB1
(c) RB1/(RB1+RB2)
(d) ( RB1+RB2)/RB2

Answer
Answer : (c)

Explanation
No answer description available for this question. Let us discuss.

22. When the temperature increases, the intrinsic stand off ratio ……………..

(a) increases
(b) decreases
(c) essentially remains the same
(d) none of the above

Answer
Answer : (c)

Explanation
No answer description available for this question. Let us discuss.

23. Between the peak point and the valley point of UJT emitter characteristics we have ………… region.

(a) saturation
(b) negative resistance
(c) cut-off
(d) none of the above

Answer
Answer : (b)

Explanation
No answer description available for this question. Let us discuss.

24. A diac is turned on by ………………….

(a) breakover voltage
(b) gate voltage
(c) gate current
(d) none of the above

Answer
Answer : (b)

Explanation
No answer description available for this question. Let us discuss.

25. The device that exhibits negative resistance region is ……………………

(a) diac
(b) triac
(c) transistor
(d) UJT

Answer
Answer : (d)

Explanation
No answer description available for this question. Let us discuss.

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