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Power Semiconductor Devices – 1 – 5

21. The intrinsic stand off ratio (η) of a UJT is given by ……………..

(a) RB1+RB2
(b) (RB1+RB2)/RB1
(c) RB1/(RB1+RB2)
(d) ( RB1+RB2)/RB2

ANSWER

EXPLANATION

22. When the temperature increases, the intrinsic stand off ratio ……………..

(a) increases
(b) decreases
(c) essentially remains the same
(d) none of the above

ANSWER

EXPLANATION

23. Between the peak point and the valley point of UJT emitter characteristics we have ………… region.

(a) saturation
(b) negative resistance
(c) cut-off
(d) none of the above

ANSWER

EXPLANATION

24. A diac is turned on by ………………….

(a) breakover voltage
(b) gate voltage
(c) gate current
(d) none of the above

ANSWER

EXPLANATION

25. The device that exhibits negative resistance region is ……………………

(a) diac
(b) triac
(c) transistor
(d) UJT

ANSWER

EXPLANATION

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