Home / Power Semiconductor Devices – 1 – 4

Power Semiconductor Devices – 1 – 4

16. When the emitter terminal of a UJT is open, the resistance between the base terminals is generally …………

(a) high
(b) low
(c) extremely low
(d) none of the above

Answer
Answer : (a)

Explanation
No answer description available for this question. Let us discuss.

17. When a UJT is turned ON, the resistance between emitter terminal and lower base terminal ……………….

(a) remains the same
(b) is decreased
(c) is increased
(d) none of the above

Answer
Answer : (b)

Explanation
No answer description available for this question. Let us discuss.

18. To turn on UJT, the forward bias on the emitter diode should be ………… the peak point voltage.

(a) less than
(b) equal to
(c) more than
(d) none of the above

Answer
Answer : (c)

Explanation
No answer description available for this question. Let us discuss.

19. A UJT is sometimes called ………… diode.

(a) low resistance
(b) high resistance
(c) single-base
(d) double-based

Answer
Answer : (d)

Explanation
No answer description available for this question. Let us discuss.

20. When the temperature increases, the inter-base resistance (RBB) of a UJT …………

(a) increases
(b) decreases
(c) remains the same
(d) none of the above

Answer
Answer : (a)

Explanation
No answer description available for this question. Let us discuss.

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