Power Semiconductor Devices » Exercise - 1 25. The device that exhibits negative resistance region is ........................ (a) diac (b) triac (c) transistor (d) UJT
Power Semiconductor Devices » Exercise - 1 27. A diac is simply ........................ (a) a single junction device (b) a three junction device (c) a triac without gate terminal (d) none of the above
Power Semiconductor Devices » Exercise - 1 28. After peak point, the UJT operates in the ........................ region. (a) cut-off (b) saturation (c) negative resistance (d) none of the above
Power Semiconductor Devices » Exercise - 1 29. Which of the following is not a characteristic of UJT ? (a) intrinsic stand off ratio (b) negative resistance (c) peak-point voltage (d) bilateral conduction