Home / PN Junction Diode – 1 – 8

PN Junction Diode – 1 – 8

36. Boltzmann diode equation relates :

(a) Voltage and temperature characteristics of a junction
(b) Voltage and current characteristics of a junction
(c) Current and temperature characteristics of a junction
(d) Resistance and temperature characteristics of a junction

Answer
Answer : (a)

Explanation
No answer description available for this question. Let us discuss.

37. The reverse current in a diode is of the order of …………

(a) kA
(b) mA
(c) microA
(d) A

Answer
Answer : (c)

Explanation
No answer description available for this question. Let us discuss.

38. The forward voltage drop across a silicon diode is about ………….

(a) 2.5 V
(b) 3 V
(c) 10 V
(d) 0.7 V

Answer
Answer : (d)

Explanation
No answer description available for this question. Let us discuss.

39. The width of the depletion layer in a P-N junction diode :

(a) Increases when a forward bias is applied
(b) Decreases when a reverse bias is applied
(c) Remain the same, irrespective of the bias
(d) none of these

Answer
Answer : (a)

Explanation
No answer description available for this question. Let us discuss.

40. Depletion region in a diode is –

(a) Positivity charged
(b) Negatively charged
(c) Completely neutral and has no charge
(d) A charged region of positive and negative ions at the junction

Answer
Answer : (d)

Explanation
No answer description available for this question. Let us discuss.

1 2 3 4 5 6 7 8 9

General Knowledge Books

Be a Part of the New & Next

MCQs fb  MCQs G+

Share the Knowledge

MORE INFORMATION
GATE Total InfoGATE 2019 BooksFree Notes
IES Total InfoIES 2019 BooksFree Mock tests
JAM Total InfoJAM 2019 BooksEngg Diploma
PSUs Total InfoM Tech Total InfoUGC NET Total Info

Leave a Reply

Your email address will not be published. Required fields are marked *

Copy Protected by Chetan's WP-Copyprotect.