MOSFET – Exercise – 1

1. For a MOSFET, the gate current :

(a) Is dependent on drain current
(b) Is negligibly small
(c) Is independent of gate voltage
(d) Increases with increase in gate voltage

Answer
Answer : (b)
Explanation
No answer description available for this question. Let us discuss.

2. For an n-channel enhancement mode MOSFET, the drain current :

(a) Decreases with increases in drain voltage
(b) Decreases with decrease in drain voltage
(c) Increases with increases in gate voltage
(d) Increases with decrease in gate voltage

Answer
Answer : (c)
Explanation
No answer description available for this question. Let us discuss.

3. Input impedance of MOSFET is :

(a) Less than BJT but more than FET
(b) More than BJT but less than FET
(c) More than BJT and FET
(d) Less than BJT and FET

Answer
Answer : (c)
Explanation
No answer description available for this question. Let us discuss.

4. Electrostatic discharge may kill :

(a) BJT
(b) FET
(c) UJT
(d) MOSFET

Answer
Answer : (d)
Explanation
No answer description available for this question. Let us discuss.

5. Consider the statements
Statement I : N-channel MOS transistors are faster than p-channel MOS transistor.
Statement II : Surface field effect is the operational principle of MOSFETs.
Which of the above is/are a valid one ?

(a) Statement I only
(b) Statement II only
(c) Both statements I and II
(d) Either statement I or II

Answer
Answer : (c)
Explanation
No answer description available for this question. Let us discuss.
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