Memory Devices – 1 – 2

6. BURST refresh in DRAM is also called as :

(a) Concentrated Refresh
(b) Distributed Refresh
(c) Hidden Refresh
(d) None

ANSWER

EXPLANATION

7. For the most static RAM, the maximum access time is about :

(a) 1 ns
(b) 10 ns
(c) 100 ns
(d) 1 µs

ANSWER

EXPLANATION

8. For the most static RAM, the write pulse width should be at least :

(a) 10 ns
(b) 60 ns
(c) 300 ns
(d)
 1 µs

ANSWER

EXPLANATION

9. Access time is faster for :

(a) ROM
(b) SRAM
(c) DRAM
(d) EPROM

ANSWER

EXPLANATION

10. ROM stands for :

(a) Reading/writing
(b) Writing
(c) Reading
(d) All the above

ANSWER

EXPLANATION

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