FET – Exercise – 2

FET » Exercise – 2

51. A common base configuration of a pnp transistor is analogous to ……. of a JFET.

(a) common source configuration
(b) common drain configuration
(c) common gate configuration
(d) none of the above

Answer
Answer : (c)
Explanation
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52. A JFET has high input impedance because …….

(a) it is made of semiconductor material
(b) input is reverse biased
(c) of impurity atoms
(d) none of the above

Answer
Answer : (b)
Explanation
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53. In a JFET, when drain voltage is equal to pinch-off voltage, the depletion layers …….

(a) almost touch each other
(b) have large gap
(c) have moderate gap
(d) none of the above

Answer
Answer : (a)
Explanation
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54. In a JFET, IDSS is known as …………..

(a) drain to source current
(b) drain to source current with gate shorted
(c) drain to source current with gate open
(d) none of the above

Answer
Answer : (b)
Explanation
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55. The two important advantages of a JFET are …………..

(a) high input impedance and square-law property
(b) inexpensive and high output impedance
(c) low input impedance and high output impedance
(d) none of the above

Answer
Answer : (a)
Explanation
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