FET – 2 – 1

51. A common base configuration of a pnp transistor is analogous to ……. of a JFET.

(a) common source configuration
(b) common drain configuration
(c) common gate configuration
(d) none of the above

52. A JFET has high input impedance because …….

(a) it is made of semiconductor material
(b) input is reverse biased
(c) of impurity atoms
(d) none of the above

53. In a JFET, when drain voltage is equal to pinch-off voltage, the depletion layers …….

(a) almost touch each other
(b) have large gap
(c) have moderate gap
(d) none of the above

54. In a JFET, IDSS is known as …………..

(a) drain to source current
(b) drain to source current with gate shorted
(c) drain to source current with gate open
(d) none of the above

55. The two important advantages of a JFET are …………..

(a) high input impedance and square-law property
(b) inexpensive and high output impedance
(c) low input impedance and high output impedance
(d) none of the above

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