16. The substrate for IC fabrication is :
(a) P type with typical thickness 200 μm
(b) P type with typical thickness 50 μm
(c) N type with typical thickness 200 μm
(d) N type with typical thickness 50 μm
17. Ultraviolet radiation is used in IC fabrication for :
(a) Diffusion
(b) Masking
(c) Isolation
(d) Metallization
18. Epitaxial growth is best suited for :
(a) Growing polycrystalline pure silicon
(b) Growing crystal of several inch thickness
(c) Very thick single crystal on a substrate
(d) Very thin single crystal on a substrate
19. At room temperature intrinsic carrier concentration is higher in germanium than in silicon due to :
(a) Larger atomic number
(b) Greater atomic weight
(c) High carrier mobility
(d) Smaller energy gap
20. An IC has …………….. size.
(a) very large
(b) large
(c) extremely small
(d) none of the above
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