Basics of ICs – Exercise – 1

1. The substrate for IC fabrication is :

(a) p type with typical thickness 200 μm
(b) p type with typical thickness 50 μm
(c) n type with typical thickness 200 μm
(d) n type with typical thickness 50 μm

Answer
Answer : (a)
Explanation
No answer description available for this question. Let us discuss.

2. The active components of the IC’s are formed in :

(a) the substrate
(b) SiO2 layer
(c) epitaxial layer
(d) none of these

Answer
Answer : (c)
Explanation
No answer description available for this question. Let us discuss.

3. In IC fabrication, metallization means :

(a) depositing SiO2 layer
(b) covering with metallic cap
(c) forming interconnection conduction pattern
(d) all of the above

Answer
Answer : (b)
Explanation
No answer description available for this question. Let us discuss.

4. In a single chip computer, CMOS circuits are used because of :

(a) low lower dissipation
(b) large packing density
(c) high noise immunity
(d) economicity

Answer
Answer : (b)
Explanation
No answer description available for this question. Let us discuss.

5. The voltage gain of basic CMOS is approximately :

(a) (gmro)/2
(b) 2gmro
(c) 1/(2gmro)
(d) 2gm/ro

Answer
Answer : (a)
Explanation
No answer description available for this question. Let us discuss.
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