Basics of ICs – 19

19. At room temperature intrinsic carrier concentration is higher in germanium than in silicon due to :

(a) Larger atomic number
(b) Greater atomic weight
(c) High carrier mobility
(d) Smaller energy gap

Answer

Answer : (d)

Explanation

Explanation : No answer description available for this question. Let us discuss.

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Basics of ICs - 21
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