Home / Basics of ICs – 1 – 4

Basics of ICs – 1 – 4

16. The substrate for IC fabrication is :

(a) P type with typical thickness 200 μm
(b) P type with typical thickness 50 μm
(c) N type with typical thickness 200 μm
(d) N type with typical thickness 50 μm

Answer
Answer : (a)

Explanation
No answer description available for this question. Let us discuss.

17. Ultraviolet radiation is used in IC fabrication for :

(a) Diffusion
(b) Masking
(c) Isolation
(d) Metallization

Answer
Answer : (a)

Explanation
No answer description available for this question. Let us discuss.

18. Epitaxial growth is best suited for :

(a) Growing polycrystalline pure silicon
(b) Growing crystal of several inch thickness
(c) Very thick single crystal on a substrate
(d) Very thin single crystal on a substrate

Answer
Answer : (d)

Explanation
No answer description available for this question. Let us discuss.

19. At room temperature intrinsic carrier concentration is higher in germanium than in silicon due to :

(a) Larger atomic number
(b) Greater atomic weight
(c) High carrier mobility
(d) Smaller energy gap

Answer
Answer : (d)

Explanation
No answer description available for this question. Let us discuss.

20. An IC has …………….. size.

(a) very large
(b) large
(c) extremely small
(d) none of the above

Answer
Answer : (c)

Explanation
No answer description available for this question. Let us discuss.

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