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Basics of ICs – 1 – 3

11. Identify the ordered processing steps in fabrication of integrated circuits.

(a) Diffusion, Oxidation, Chemical vapour deposition, Photolithography, Metallization
(b) Oxidation, Diffusion, Chemical vapour deposition, Photolithography, Metallization
(c) Chemical vapor deposition, Oxidation, Diffusion, Photolithography, Metallization
(d) Diffusion, Oxidation, Photolithography, Chemical vapor deposition, Metallization

ANSWER

EXPLANATION

12. In IC fabrication, gettering is a process by which :

(a) The silicon wafer is highly polished
(b) The silicon wafer is pre-heated to an optimum temperature for diffusion
(c) The harmful impurities or defects are removed from the region in a wafer where devices are to be fabricated
(d) Wafers are sliced into thin films

ANSWER

EXPLANATION

13. The law, which governs the diffusion process during the IC fabrication, is :

(a) Flicker’s law
(b) Flick law
(c) Fick law
(d) Fickler’s law

ANSWER

EXPLANATION

14. The most common diffusant used in interstitial diffusion in IC fabrication is :

(a) Boron
(b) Arsenic
(c) Nickel
(d) Gold

ANSWER

EXPLANATION

15. Metallic crystal possesses :

(a) High optical reflection and absorption coefficient
(b) Good conducting property due to the presence of free electrons
(c) Opaque to all electromagnetic radiations from low frequency to the middle ultraviolet
(d) All of these

ANSWER

EXPLANATION

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