Basics of ICs – 1 – 2

6. During IC fabrication, the chemical reaction involved in epitaxial growth takes place at a temperature of about :

(a) 500 °C
(b) 1000 °C
(c) 1200 °C
(d)
 1500 °C

ANSWER
Answer : (c)

EXPLANATION
No answer description available for this question. Let us discuss.

7. In IC fabrication, metallization means :

(a) Depositing SiO2 layer
(b) Covering with metallic cap
(c) Forming interconnection conduction pattern
(d)
 All of the above

ANSWER
Answer : (b)

EXPLANATION
No answer description available for this question. Let us discuss.

8. The active components of the IC’s are formed in :

(a) The substrate
(b) SiO2layer
(c) Epitaxial layer
(d) 
None of these

ANSWER
Answer : (c)

EXPLANATION
No answer description available for this question. Let us discuss.

9. The function of SiO2 layer in IC fabrication is :

(a) Oxide masking
(b) Oxide passivation
(c) Oxide purification
(d)
 Both a & b

ANSWER
Answer : (d)

EXPLANATION
No answer description available for this question. Let us discuss.

10. Which is the final step in wafer processing sequence ?

(a) Photolithography
(b) Chemical vapour
(c) Metallization
(d)
 Oxidation

ANSWER
Answer : (c)

EXPLANATION
No answer description available for this question. Let us discuss.

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