1. The substrate for IC fabrication is :
(a) p type with typical thickness 200 μm
(b) p type with typical thickness 50 μm
(c) n type with typical thickness 200 μm
(d) n type with typical thickness 50 μm
2. The active components of the IC’s are formed in :
(a) the substrate
(b) SiO2 layer
(c) epitaxial layer
(d) none of these
3. In IC fabrication, metallization means :
(a) depositing SiO2 layer
(b) covering with metallic cap
(c) forming interconnection conduction pattern
(d) all of the above
4. In a single chip computer, CMOS circuits are used because of :
(a) low lower dissipation
(b) large packing density
(c) high noise immunity
(d) economicity
5. The voltage gain of basic CMOS is approximately :
(a) (gmro)/2
(b) 2gmro
(c) 1/(2gmro)
(d) 2gm/ro
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